Cargando…
Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors
[Image: see text] We report the first demonstration of flexible white phosphor-converted light emitting diodes (LEDs) based on p–n junction core/shell nitride nanowires. GaN nanowires containing seven radial In(0.2)Ga(0.8)N/GaN quantum wells were grown by metal–organic chemical vapor deposition on a...
Autores principales: | Guan, Nan, Dai, Xing, Messanvi, Agnès, Zhang, Hezhi, Yan, Jianchang, Gautier, Eric, Bougerol, Catherine, Julien, François H., Durand, Christophe, Eymery, Joël, Tchernycheva, Maria |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American
Chemical Society
2016
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4902128/ https://www.ncbi.nlm.nih.gov/pubmed/27331079 http://dx.doi.org/10.1021/acsphotonics.5b00696 |
Ejemplares similares
-
Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015) -
Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes
por: Guan, Nan, et al.
Publicado: (2020) -
Flexible
Photodiodes Based on Nitride Core/Shell p–n
Junction Nanowires
por: Zhang, Hezhi, et al.
Publicado: (2016) -
Flexible inorganic light emitting diodes based on semiconductor nanowires
por: Guan, Nan, et al.
Publicado: (2017) -
Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications
por: Salomon, Damien, et al.
Publicado: (2013)