Anomalous photoluminescence in InP(1−x)Bi(x)

Low temperature photoluminescence (PL) from InP(1−x)Bi(x) thin films with Bi concentrations in the 0–2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels...

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Detalles Bibliográficos
Autores principales: Wu, Xiaoyan, Chen, Xiren, Pan, Wenwu, Wang, Peng, Zhang, Liyao, Li, Yaoyao, Wang, Hailong, Wang, Kai, Shao, Jun, Wang, Shumin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4904191/
https://www.ncbi.nlm.nih.gov/pubmed/27291823
http://dx.doi.org/10.1038/srep27867
Descripción
Sumario:Low temperature photoluminescence (PL) from InP(1−x)Bi(x) thin films with Bi concentrations in the 0–2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 μm in optical coherent tomography (OCT).

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