Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic...

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Detalles Bibliográficos
Autores principales: Kriegner, D., Výborný, K., Olejník, K., Reichlová, H., Novák, V., Marti, X., Gazquez, J., Saidl, V., Němec, P., Volobuev, V. V., Springholz, G., Holý, V., Jungwirth, T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4906165/
https://www.ncbi.nlm.nih.gov/pubmed/27279433
http://dx.doi.org/10.1038/ncomms11623

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4906165/
https://www.ncbi.nlm.nih.gov/pubmed/27279433
http://dx.doi.org/10.1038/ncomms11623

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