Temperature-dependent photoluminescence of surface-engineered silicon nanocrystals

In this work we report on temperature-dependent photoluminescence measurements (15–300 K), which have allowed probing radiative transitions and understanding of the appearance of various transitions. We further demonstrate that transitions associated with oxide in SiNCs show characteristic vibronic...

Descripción completa

Detalles Bibliográficos
Autores principales: Mitra, Somak, Švrček, Vladimir, Macias-Montero, Manual, Velusamy, Tamilselvan, Mariotti, Davide
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4906357/
https://www.ncbi.nlm.nih.gov/pubmed/27296771
http://dx.doi.org/10.1038/srep27727
Descripción
Sumario:In this work we report on temperature-dependent photoluminescence measurements (15–300 K), which have allowed probing radiative transitions and understanding of the appearance of various transitions. We further demonstrate that transitions associated with oxide in SiNCs show characteristic vibronic peaks that vary with surface characteristics. In particular we study differences and similarities between silicon nanocrystals (SiNCs) derived from porous silicon and SiNCs that were surface-treated using a radio-frequency (RF) microplasma system.

Ejemplares similares