Evidence That Voltage Rather Than Resistance is Quantized in Breakdown of the Quantum Hall Effect

Quantized longitudinal voltage drops are observed along a length of a GaAs/AlGaAs heterostructure quantum Hall effect device at applied currents large enough for the device to be in the breakdown regime. The range of currents is extensive enough to demonstrate that it is the longitudinal voltage tha...

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Detalles Bibliográficos
Autor principal: Cage, M. E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1996
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4907585/
https://www.ncbi.nlm.nih.gov/pubmed/27805124
http://dx.doi.org/10.6028/jres.101.019
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author Cage, M. E.
author_facet Cage, M. E.
author_sort Cage, M. E.
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description Quantized longitudinal voltage drops are observed along a length of a GaAs/AlGaAs heterostructure quantum Hall effect device at applied currents large enough for the device to be in the breakdown regime. The range of currents is extensive enough to demonstrate that it is the longitudinal voltage that is quantized, rather than the longitudinal resistance. A black-box and a quasi-elastic inter-Landau level scattering (QUILLS) model are then employed to calculate the fraction of electrons making transitions into higher Landau levels, the transition rates, and the maximum electric field across the device.
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spelling pubmed-49075852016-10-28 Evidence That Voltage Rather Than Resistance is Quantized in Breakdown of the Quantum Hall Effect Cage, M. E. J Res Natl Inst Stand Technol Article Quantized longitudinal voltage drops are observed along a length of a GaAs/AlGaAs heterostructure quantum Hall effect device at applied currents large enough for the device to be in the breakdown regime. The range of currents is extensive enough to demonstrate that it is the longitudinal voltage that is quantized, rather than the longitudinal resistance. A black-box and a quasi-elastic inter-Landau level scattering (QUILLS) model are then employed to calculate the fraction of electrons making transitions into higher Landau levels, the transition rates, and the maximum electric field across the device. [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1996 /pmc/articles/PMC4907585/ /pubmed/27805124 http://dx.doi.org/10.6028/jres.101.019 Text en https://creativecommons.org/publicdomain/zero/1.0/ The Journal of Research of the National Institute of Standards and Technology is a publication of the U.S. Government. The papers are in the public domain and are not subject to copyright in the United States. Articles from J Res may contain photographs or illustrations copyrighted by other commercial organizations or individuals that may not be used without obtaining prior approval from the holder of the copyright.
spellingShingle Article
Cage, M. E.
Evidence That Voltage Rather Than Resistance is Quantized in Breakdown of the Quantum Hall Effect
title Evidence That Voltage Rather Than Resistance is Quantized in Breakdown of the Quantum Hall Effect
title_full Evidence That Voltage Rather Than Resistance is Quantized in Breakdown of the Quantum Hall Effect
title_fullStr Evidence That Voltage Rather Than Resistance is Quantized in Breakdown of the Quantum Hall Effect
title_full_unstemmed Evidence That Voltage Rather Than Resistance is Quantized in Breakdown of the Quantum Hall Effect
title_short Evidence That Voltage Rather Than Resistance is Quantized in Breakdown of the Quantum Hall Effect
title_sort evidence that voltage rather than resistance is quantized in breakdown of the quantum hall effect
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4907585/
https://www.ncbi.nlm.nih.gov/pubmed/27805124
http://dx.doi.org/10.6028/jres.101.019
work_keys_str_mv AT cageme evidencethatvoltageratherthanresistanceisquantizedinbreakdownofthequantumhalleffect

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