A Three-Ratio Scheme for the Measurement of Isotopic Ratios of Silicon

This paper proposes a scheme of measurement sequences that has been used for the redetermination of the molar mass (atomic weight) of silicon at the Central Bureau for Nuclear Measurements (now Institute for Reference Materials and Measurements). This scheme avoids correlations among the measured ra...

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Detalles Bibliográficos
Autores principales: Ku, Harry, Schaefer, Frank, Valkiers, Staf, De Bièvre, Paul
Formato: Online Artículo Texto
Lenguaje:English
Publicado: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1993
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4909180/
https://www.ncbi.nlm.nih.gov/pubmed/28053469
http://dx.doi.org/10.6028/jres.098.017
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author Ku, Harry
Schaefer, Frank
Valkiers, Staf
De Bièvre, Paul
author_facet Ku, Harry
Schaefer, Frank
Valkiers, Staf
De Bièvre, Paul
author_sort Ku, Harry
collection PubMed
description This paper proposes a scheme of measurement sequences that has been used for the redetermination of the molar mass (atomic weight) of silicon at the Central Bureau for Nuclear Measurements (now Institute for Reference Materials and Measurements). This scheme avoids correlations among the measured ratios caused by normalizing all ion current measurements to that of the largest ion current. It also provides additional information for checking on the consistency of these ratios within a cycle of scans. Measurements of isotope abundance ratios of silicon are used as an illustration.
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spelling pubmed-49091802017-01-04 A Three-Ratio Scheme for the Measurement of Isotopic Ratios of Silicon Ku, Harry Schaefer, Frank Valkiers, Staf De Bièvre, Paul J Res Natl Inst Stand Technol Article This paper proposes a scheme of measurement sequences that has been used for the redetermination of the molar mass (atomic weight) of silicon at the Central Bureau for Nuclear Measurements (now Institute for Reference Materials and Measurements). This scheme avoids correlations among the measured ratios caused by normalizing all ion current measurements to that of the largest ion current. It also provides additional information for checking on the consistency of these ratios within a cycle of scans. Measurements of isotope abundance ratios of silicon are used as an illustration. [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1993 /pmc/articles/PMC4909180/ /pubmed/28053469 http://dx.doi.org/10.6028/jres.098.017 Text en https://creativecommons.org/publicdomain/zero/1.0/ The Journal of Research of the National Institute of Standards and Technology is a publication of the U.S. Government. The papers are in the public domain and are not subject to copyright in the United States. Articles from J Res may contain photographs or illustrations copyrighted by other commercial organizations or individuals that may not be used without obtaining prior approval from the holder of the copyright.
spellingShingle Article
Ku, Harry
Schaefer, Frank
Valkiers, Staf
De Bièvre, Paul
A Three-Ratio Scheme for the Measurement of Isotopic Ratios of Silicon
title A Three-Ratio Scheme for the Measurement of Isotopic Ratios of Silicon
title_full A Three-Ratio Scheme for the Measurement of Isotopic Ratios of Silicon
title_fullStr A Three-Ratio Scheme for the Measurement of Isotopic Ratios of Silicon
title_full_unstemmed A Three-Ratio Scheme for the Measurement of Isotopic Ratios of Silicon
title_short A Three-Ratio Scheme for the Measurement of Isotopic Ratios of Silicon
title_sort three-ratio scheme for the measurement of isotopic ratios of silicon
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4909180/
https://www.ncbi.nlm.nih.gov/pubmed/28053469
http://dx.doi.org/10.6028/jres.098.017
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