Synthesis of compositionally controllable Cu(2)(Sn(1−x)Ge(x))S(3) nanocrystals with tunable band gaps

In this work, we show that compositionally controlled Cu(2)(Sn(1–x)Ge(x))S(3) nanocrystals can be successfully synthesized by the hot-injection method through careful tuning the Ge/(Sn+Ge) precursor ratio. The band gaps of the resultant nanocrystals are demonstrated to be linearly tuned from 1.45 to 2.33 eV by adjusting the composition parameter x of the Ge/(Sn+Ge) ratio from 0.0 to 1.0. The crystalline structures of the resultant NCs have been studied by the X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), select area electron diffraction (SAED), and Raman spectroscopy. A ligand exchange procedure is further performed to replace the native ligands on the surface of the NCs with sulfur ions. The photoresponsive behavior indicates the potential use of as-prepared Cu(2)(Sn(1–x)Ge(x))S(3) nanocrystals in solar energy conversion systems. The synthesis of compositionally controlled Cu(2)(Sn(1–x)Ge(x))S(3) nanocrystals reported herein provides a way for probing the effect of Ge inclusion in the Cu-Sn-S system thin films. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (doi:10.1007/s11051-016-3439-5) contains supplementary material, which is available to authorized users.