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ALD Zn(O,S) Thin Films’ Interfacial Chemical and Structural Configuration Probed by XAS
[Image: see text] The ability to precisely control interfaces of atomic layer deposited (ALD) zinc oxysulfide (Zn(O,S)) buffer layers to other layers allows precise tuning of solar cell performance. The O K- and S K-edge X-ray absorption near edge structure (XANES) of ∼2–4 nm thin Zn(O,S) films reve...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American
Chemical Society
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4911619/ https://www.ncbi.nlm.nih.gov/pubmed/27223620 http://dx.doi.org/10.1021/acsami.6b04000 |