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Pure electronic metal-insulator transition at the interface of complex oxides
In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, ch...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4914986/ https://www.ncbi.nlm.nih.gov/pubmed/27324948 http://dx.doi.org/10.1038/srep27934 |
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author | Meyers, D. Liu, Jian Freeland, J. W. Middey, S. Kareev, M. Kwon, Jihwan Zuo, J. M. Chuang, Yi-De Kim, J. W. Ryan, P. J. Chakhalian, J. |
author_facet | Meyers, D. Liu, Jian Freeland, J. W. Middey, S. Kareev, M. Kwon, Jihwan Zuo, J. M. Chuang, Yi-De Kim, J. W. Ryan, P. J. Chakhalian, J. |
author_sort | Meyers, D. |
collection | PubMed |
description | In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO(3) in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. |
format | Online Article Text |
id | pubmed-4914986 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-49149862016-06-27 Pure electronic metal-insulator transition at the interface of complex oxides Meyers, D. Liu, Jian Freeland, J. W. Middey, S. Kareev, M. Kwon, Jihwan Zuo, J. M. Chuang, Yi-De Kim, J. W. Ryan, P. J. Chakhalian, J. Sci Rep Article In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO(3) in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. Nature Publishing Group 2016-06-21 /pmc/articles/PMC4914986/ /pubmed/27324948 http://dx.doi.org/10.1038/srep27934 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Meyers, D. Liu, Jian Freeland, J. W. Middey, S. Kareev, M. Kwon, Jihwan Zuo, J. M. Chuang, Yi-De Kim, J. W. Ryan, P. J. Chakhalian, J. Pure electronic metal-insulator transition at the interface of complex oxides |
title | Pure electronic metal-insulator transition at the interface of complex oxides |
title_full | Pure electronic metal-insulator transition at the interface of complex oxides |
title_fullStr | Pure electronic metal-insulator transition at the interface of complex oxides |
title_full_unstemmed | Pure electronic metal-insulator transition at the interface of complex oxides |
title_short | Pure electronic metal-insulator transition at the interface of complex oxides |
title_sort | pure electronic metal-insulator transition at the interface of complex oxides |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4914986/ https://www.ncbi.nlm.nih.gov/pubmed/27324948 http://dx.doi.org/10.1038/srep27934 |
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