Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiO(x) insulator and to ensure continuous downscaling of Si-based transistor technology. However, d...

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Detalles Bibliográficos
Autores principales: Tsai, Shu-Ju, Wang, Chiang-Lun, Lee, Hung-Chun, Lin, Chun-Yeh, Chen, Jhih-Wei, Shiu, Hong-Wei, Chang, Lo-Yueh, Hsueh, Han-Ting, Chen, Hung-Ying, Tsai, Jyun-Yu, Lu, Ying-Hsin, Chang, Ting-Chang, Tu, Li-Wei, Teng, Hsisheng, Chen, Yi-Chun, Chen, Chia-Hao, Wu, Chung-Lin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4915203/
https://www.ncbi.nlm.nih.gov/pubmed/27325155
http://dx.doi.org/10.1038/srep28326

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