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Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO(2) Memristor

Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated tha...

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Autores principales: Jiang, Hao, Han, Lili, Lin, Peng, Wang, Zhongrui, Jang, Moon Hyung, Wu, Qing, Barnell, Mark, Yang, J. Joshua, Xin, Huolin L., Xia, Qiangfei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4917839/
https://www.ncbi.nlm.nih.gov/pubmed/27334443
http://dx.doi.org/10.1038/srep28525
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author Jiang, Hao
Han, Lili
Lin, Peng
Wang, Zhongrui
Jang, Moon Hyung
Wu, Qing
Barnell, Mark
Yang, J. Joshua
Xin, Huolin L.
Xia, Qiangfei
author_facet Jiang, Hao
Han, Lili
Lin, Peng
Wang, Zhongrui
Jang, Moon Hyung
Wu, Qing
Barnell, Mark
Yang, J. Joshua
Xin, Huolin L.
Xia, Qiangfei
author_sort Jiang, Hao
collection PubMed
description Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated that metal cations could also play an important role, but no direct physical characterizations have been reported yet. Here we report a Ta/HfO(2)/Pt memristor with fast switching speed, record high endurance (120 billion cycles) and reliable retention. We programmed the device to 24 discrete resistance levels, and also demonstrated over a million (2(20)) epochs of potentiation and depression, suggesting that our devices can be used for both multi-level non-volatile memory and neuromorphic computing applications. More importantly, we directly observed a sub-10 nm Ta-rich and O-deficient conduction channel within the HfO(2) layer that is responsible for the switching. This work deepens our understanding of the resistance switching mechanism behind oxide-based memristive devices and paves the way for further device performance optimization for a broad spectrum of applications.
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spelling pubmed-49178392016-06-27 Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO(2) Memristor Jiang, Hao Han, Lili Lin, Peng Wang, Zhongrui Jang, Moon Hyung Wu, Qing Barnell, Mark Yang, J. Joshua Xin, Huolin L. Xia, Qiangfei Sci Rep Article Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated that metal cations could also play an important role, but no direct physical characterizations have been reported yet. Here we report a Ta/HfO(2)/Pt memristor with fast switching speed, record high endurance (120 billion cycles) and reliable retention. We programmed the device to 24 discrete resistance levels, and also demonstrated over a million (2(20)) epochs of potentiation and depression, suggesting that our devices can be used for both multi-level non-volatile memory and neuromorphic computing applications. More importantly, we directly observed a sub-10 nm Ta-rich and O-deficient conduction channel within the HfO(2) layer that is responsible for the switching. This work deepens our understanding of the resistance switching mechanism behind oxide-based memristive devices and paves the way for further device performance optimization for a broad spectrum of applications. Nature Publishing Group 2016-06-23 /pmc/articles/PMC4917839/ /pubmed/27334443 http://dx.doi.org/10.1038/srep28525 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Jiang, Hao
Han, Lili
Lin, Peng
Wang, Zhongrui
Jang, Moon Hyung
Wu, Qing
Barnell, Mark
Yang, J. Joshua
Xin, Huolin L.
Xia, Qiangfei
Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO(2) Memristor
title Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO(2) Memristor
title_full Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO(2) Memristor
title_fullStr Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO(2) Memristor
title_full_unstemmed Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO(2) Memristor
title_short Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO(2) Memristor
title_sort sub-10 nm ta channel responsible for superior performance of a hfo(2) memristor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4917839/
https://www.ncbi.nlm.nih.gov/pubmed/27334443
http://dx.doi.org/10.1038/srep28525
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