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Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO(2) Memristor
Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated tha...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4917839/ https://www.ncbi.nlm.nih.gov/pubmed/27334443 http://dx.doi.org/10.1038/srep28525 |