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A steep-slope transistor based on abrupt electronic phase transition

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their...

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Autores principales: Shukla, Nikhil, Thathachary, Arun V., Agrawal, Ashish, Paik, Hanjong, Aziz, Ahmedullah, Schlom, Darrell G., Gupta, Sumeet Kumar, Engel-Herbert, Roman, Datta, Suman
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4918311/
https://www.ncbi.nlm.nih.gov/pubmed/26249212
http://dx.doi.org/10.1038/ncomms8812
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author Shukla, Nikhil
Thathachary, Arun V.
Agrawal, Ashish
Paik, Hanjong
Aziz, Ahmedullah
Schlom, Darrell G.
Gupta, Sumeet Kumar
Engel-Herbert, Roman
Datta, Suman
author_facet Shukla, Nikhil
Thathachary, Arun V.
Agrawal, Ashish
Paik, Hanjong
Aziz, Ahmedullah
Schlom, Darrell G.
Gupta, Sumeet Kumar
Engel-Herbert, Roman
Datta, Suman
author_sort Shukla, Nikhil
collection PubMed
description Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO(2)), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep (‘sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO(2) is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO(2) to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.
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spelling pubmed-49183112016-07-07 A steep-slope transistor based on abrupt electronic phase transition Shukla, Nikhil Thathachary, Arun V. Agrawal, Ashish Paik, Hanjong Aziz, Ahmedullah Schlom, Darrell G. Gupta, Sumeet Kumar Engel-Herbert, Roman Datta, Suman Nat Commun Article Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO(2)), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep (‘sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO(2) is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO(2) to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications. Nature Publishing Group 2015-08-07 /pmc/articles/PMC4918311/ /pubmed/26249212 http://dx.doi.org/10.1038/ncomms8812 Text en Copyright © 2015, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Shukla, Nikhil
Thathachary, Arun V.
Agrawal, Ashish
Paik, Hanjong
Aziz, Ahmedullah
Schlom, Darrell G.
Gupta, Sumeet Kumar
Engel-Herbert, Roman
Datta, Suman
A steep-slope transistor based on abrupt electronic phase transition
title A steep-slope transistor based on abrupt electronic phase transition
title_full A steep-slope transistor based on abrupt electronic phase transition
title_fullStr A steep-slope transistor based on abrupt electronic phase transition
title_full_unstemmed A steep-slope transistor based on abrupt electronic phase transition
title_short A steep-slope transistor based on abrupt electronic phase transition
title_sort steep-slope transistor based on abrupt electronic phase transition
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4918311/
https://www.ncbi.nlm.nih.gov/pubmed/26249212
http://dx.doi.org/10.1038/ncomms8812
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