Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy

We report a novel method to fabricate high quality 2-inch freestanding GaN substrate grown on cross-stacked carbon nanotubes (CSCNTs) coated sapphire by hydride vapor phase epitaxy (HVPE). As nanoscale masks, these CSCNTs can help weaken the interface connection and release the compressive stress by...

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Detalles Bibliográficos
Autores principales: Wei, Tongbo, Yang, Jiankun, Wei, Yang, Huo, Ziqiang, Ji, Xiaoli, Zhang, Yun, Wang, Junxi, Li, Jinmin, Fan, Shoushan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4919624/
https://www.ncbi.nlm.nih.gov/pubmed/27340030
http://dx.doi.org/10.1038/srep28620

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4919624/
https://www.ncbi.nlm.nih.gov/pubmed/27340030
http://dx.doi.org/10.1038/srep28620

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