Cargando…
Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb(2)Te(3) Alloys
A combination of far-infrared and Raman spectroscopy is employed to investigate vibrational modes and the carrier behavior in amorphous and crystalline ordered GeTe-Sb(2)Te(3) alloys (GST) epitaxially grown on Si(111). The infrared active GST mode is not observed in the Raman spectra and vice versa,...
Autores principales: | Bragaglia, V., Holldack, K., Boschker, J. E., Arciprete, F., Zallo, E., Flissikowski, T., Calarco, R. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4919779/ https://www.ncbi.nlm.nih.gov/pubmed/27340085 http://dx.doi.org/10.1038/srep28560 |
Ejemplares similares
-
Phonon anharmonicities and ultrafast dynamics in epitaxial Sb(2)Te(3)
por: Bragaglia, V., et al.
Publicado: (2020) -
Electrical and optical properties of epitaxial binary and ternary GeTe-Sb(2)Te(3) alloys
por: Boschker, Jos E., et al.
Publicado: (2018) -
Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
por: Zallo, Eugenio, et al.
Publicado: (2017) -
Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
por: Zallo, Eugenio, et al.
Publicado: (2018) -
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
por: Bragaglia, Valeria, et al.
Publicado: (2016)