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Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes
The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical featur...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4919786/ https://www.ncbi.nlm.nih.gov/pubmed/27339272 http://dx.doi.org/10.1038/srep28520 |