Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin dimensions. However, most TMDs have bandgaps (E(g)) and effective...

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Detalles Bibliográficos
Autores principales: Ameen, Tarek A., Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4921921/
https://www.ncbi.nlm.nih.gov/pubmed/27345020
http://dx.doi.org/10.1038/srep28515

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4921921/
https://www.ncbi.nlm.nih.gov/pubmed/27345020
http://dx.doi.org/10.1038/srep28515

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