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Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin dimensions. However, most TMDs have bandgaps (E(g)) and effective...

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Detalles Bibliográficos
Autores principales:	Ameen, Tarek A., Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4921921/ https://www.ncbi.nlm.nih.gov/pubmed/27345020 http://dx.doi.org/10.1038/srep28515

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