Rear-Sided Passivation by SiN(x):H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells

Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiN(x):H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiN(x):H layer boosted the open circuit voltage (V(oc)) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiN(x):H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PEDOT:PSS, rear-SiN(x):H, front PEDOT:PSS/rear-SiN(x):H, etc. are thoroughly investigated, in consideration of the process-related variations.