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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombin...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MyJove Corporation
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4927739/ https://www.ncbi.nlm.nih.gov/pubmed/27285177 http://dx.doi.org/10.3791/53872 |