Novel Colloidal MoS(2) Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices

Silicon compatible wafer scale MoS(2) heterojunctions are reported for the first time using colloidal quantum dots. Size dependent direct band gap emission of MoS(2) dots are presented at room temperature. The temporal stability and decay dynamics of excited charge carriers in MoS(2) quantum dots have been studied using time correlated single photon counting spectroscopy technique. Fabricated n-MoS(2)/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias. The electroluminescences with white light emission spectra in the range of 450–800 nm are found to be stable in the temperature range of 10–350 K. Size dependent spectral responsivity and detectivity of the heterojunction devices have been studied. The peak responsivity and detectivity of the fabricated heterojunction detector are estimated to be ~0.85 A/W and ~8 × 10(11) Jones, respectively at an applied bias of −2 V for MoS(2) QDs of 2 nm mean diameter. The above values are found to be superior to the reported results on large area photodetector devices fabricated using two dimensional materials.