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Band-like transport in highly crystalline graphene films from defective graphene oxides
The electrical transport property of the reduced graphene oxide (rGO) thin-films synthesized from defective GO through thermal treatment in a reactive ethanol environment at high temperature above 1000 °C shows a band-like transport with small thermal activation energy (E(a)~10 meV) that occurs duri...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4929449/ https://www.ncbi.nlm.nih.gov/pubmed/27364116 http://dx.doi.org/10.1038/srep28936 |
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author | Negishi, R. Akabori, M. Ito, T. Watanabe, Y. Kobayashi, Y. |
author_facet | Negishi, R. Akabori, M. Ito, T. Watanabe, Y. Kobayashi, Y. |
author_sort | Negishi, R. |
collection | PubMed |
description | The electrical transport property of the reduced graphene oxide (rGO) thin-films synthesized from defective GO through thermal treatment in a reactive ethanol environment at high temperature above 1000 °C shows a band-like transport with small thermal activation energy (E(a)~10 meV) that occurs during high carrier mobility (~210 cm(2)/Vs). Electrical and structural analysis using X-ray absorption fine structure, the valence band photo-electron, Raman spectra and transmission electron microscopy indicate that a high temperature process above 1000 °C in the ethanol environment leads to an extraordinary expansion of the conjugated π-electron system in rGO due to the efficient restoration of the graphitic structure. We reveal that E(a) decreases with the increasing density of states near the Fermi level due to the expansion of the conjugated π-electron system in the rGO. This means that E(a) corresponds to the energy gap between the top of the valence band and the bottom of the conduction band. The origin of the band-like transport can be explained by the carriers, which are more easily excited into the conduction band due to the decreasing energy gap with the expansion of the conjugated π-electron system in the rGO. |
format | Online Article Text |
id | pubmed-4929449 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-49294492016-07-06 Band-like transport in highly crystalline graphene films from defective graphene oxides Negishi, R. Akabori, M. Ito, T. Watanabe, Y. Kobayashi, Y. Sci Rep Article The electrical transport property of the reduced graphene oxide (rGO) thin-films synthesized from defective GO through thermal treatment in a reactive ethanol environment at high temperature above 1000 °C shows a band-like transport with small thermal activation energy (E(a)~10 meV) that occurs during high carrier mobility (~210 cm(2)/Vs). Electrical and structural analysis using X-ray absorption fine structure, the valence band photo-electron, Raman spectra and transmission electron microscopy indicate that a high temperature process above 1000 °C in the ethanol environment leads to an extraordinary expansion of the conjugated π-electron system in rGO due to the efficient restoration of the graphitic structure. We reveal that E(a) decreases with the increasing density of states near the Fermi level due to the expansion of the conjugated π-electron system in the rGO. This means that E(a) corresponds to the energy gap between the top of the valence band and the bottom of the conduction band. The origin of the band-like transport can be explained by the carriers, which are more easily excited into the conduction band due to the decreasing energy gap with the expansion of the conjugated π-electron system in the rGO. Nature Publishing Group 2016-07-01 /pmc/articles/PMC4929449/ /pubmed/27364116 http://dx.doi.org/10.1038/srep28936 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Negishi, R. Akabori, M. Ito, T. Watanabe, Y. Kobayashi, Y. Band-like transport in highly crystalline graphene films from defective graphene oxides |
title | Band-like transport in highly crystalline graphene films from defective graphene oxides |
title_full | Band-like transport in highly crystalline graphene films from defective graphene oxides |
title_fullStr | Band-like transport in highly crystalline graphene films from defective graphene oxides |
title_full_unstemmed | Band-like transport in highly crystalline graphene films from defective graphene oxides |
title_short | Band-like transport in highly crystalline graphene films from defective graphene oxides |
title_sort | band-like transport in highly crystalline graphene films from defective graphene oxides |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4929449/ https://www.ncbi.nlm.nih.gov/pubmed/27364116 http://dx.doi.org/10.1038/srep28936 |
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