An Accurate Value for the Absorption Coefficient of Silicon at 633 nm

High-accuracy transmission measurements at an optical wavelength of 633 nm and mechanical measurements of the thickness of a 13-µm thick silicon-crystal film have been used to calculate the absorption and extinction coefficients of silicon at 633 nm. The results are 3105±62 cm(−1) and 0.01564±0.0003...

Descripción completa

Detalles Bibliográficos
Autores principales: Geist, Jon, Schaefer, A. Russell, Song, Jun-Feng, Wang, Yun Hsia, Zalewski, Edward F.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1990
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4930019/
https://www.ncbi.nlm.nih.gov/pubmed/28179791
http://dx.doi.org/10.6028/jres.095.043
_version_ 1782440687653879808
author Geist, Jon
Schaefer, A. Russell
Song, Jun-Feng
Wang, Yun Hsia
Zalewski, Edward F.
author_facet Geist, Jon
Schaefer, A. Russell
Song, Jun-Feng
Wang, Yun Hsia
Zalewski, Edward F.
author_sort Geist, Jon
collection PubMed
description High-accuracy transmission measurements at an optical wavelength of 633 nm and mechanical measurements of the thickness of a 13-µm thick silicon-crystal film have been used to calculate the absorption and extinction coefficients of silicon at 633 nm. The results are 3105±62 cm(−1) and 0.01564±0.00031, respectively. These results are about 15% less than current handbook data for the same quantities, but are in good agreement with a recent fit to one set of data described in the literature.
format Online
Article
Text
id pubmed-4930019
institution National Center for Biotechnology Information
language English
publishDate 1990
publisher [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology
record_format MEDLINE/PubMed
spelling pubmed-49300192017-02-08 An Accurate Value for the Absorption Coefficient of Silicon at 633 nm Geist, Jon Schaefer, A. Russell Song, Jun-Feng Wang, Yun Hsia Zalewski, Edward F. J Res Natl Inst Stand Technol Article High-accuracy transmission measurements at an optical wavelength of 633 nm and mechanical measurements of the thickness of a 13-µm thick silicon-crystal film have been used to calculate the absorption and extinction coefficients of silicon at 633 nm. The results are 3105±62 cm(−1) and 0.01564±0.00031, respectively. These results are about 15% less than current handbook data for the same quantities, but are in good agreement with a recent fit to one set of data described in the literature. [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1990 /pmc/articles/PMC4930019/ /pubmed/28179791 http://dx.doi.org/10.6028/jres.095.043 Text en https://creativecommons.org/publicdomain/zero/1.0/ The Journal of Research of the National Institute of Standards and Technology is a publication of the U.S. Government. The papers are in the public domain and are not subject to copyright in the United States. Articles from J Res may contain photographs or illustrations copyrighted by other commercial organizations or individuals that may not be used without obtaining prior approval from the holder of the copyright.
spellingShingle Article
Geist, Jon
Schaefer, A. Russell
Song, Jun-Feng
Wang, Yun Hsia
Zalewski, Edward F.
An Accurate Value for the Absorption Coefficient of Silicon at 633 nm
title An Accurate Value for the Absorption Coefficient of Silicon at 633 nm
title_full An Accurate Value for the Absorption Coefficient of Silicon at 633 nm
title_fullStr An Accurate Value for the Absorption Coefficient of Silicon at 633 nm
title_full_unstemmed An Accurate Value for the Absorption Coefficient of Silicon at 633 nm
title_short An Accurate Value for the Absorption Coefficient of Silicon at 633 nm
title_sort accurate value for the absorption coefficient of silicon at 633 nm
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4930019/
https://www.ncbi.nlm.nih.gov/pubmed/28179791
http://dx.doi.org/10.6028/jres.095.043
work_keys_str_mv AT geistjon anaccuratevaluefortheabsorptioncoefficientofsiliconat633nm
AT schaeferarussell anaccuratevaluefortheabsorptioncoefficientofsiliconat633nm
AT songjunfeng anaccuratevaluefortheabsorptioncoefficientofsiliconat633nm
AT wangyunhsia anaccuratevaluefortheabsorptioncoefficientofsiliconat633nm
AT zalewskiedwardf anaccuratevaluefortheabsorptioncoefficientofsiliconat633nm
AT geistjon accuratevaluefortheabsorptioncoefficientofsiliconat633nm
AT schaeferarussell accuratevaluefortheabsorptioncoefficientofsiliconat633nm
AT songjunfeng accuratevaluefortheabsorptioncoefficientofsiliconat633nm
AT wangyunhsia accuratevaluefortheabsorptioncoefficientofsiliconat633nm
AT zalewskiedwardf accuratevaluefortheabsorptioncoefficientofsiliconat633nm

Ejemplares similares