Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs

The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also d...

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Detalles Bibliográficos
Autores principales: Geist, Jon, Chandler-Horowitz, Deane, Robinson, A. M., James, C. R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1991
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4930052/
https://www.ncbi.nlm.nih.gov/pubmed/28184122
http://dx.doi.org/10.6028/jres.096.023
_version_ 1782440695089332224
author Geist, Jon
Chandler-Horowitz, Deane
Robinson, A. M.
James, C. R.
author_facet Geist, Jon
Chandler-Horowitz, Deane
Robinson, A. M.
James, C. R.
author_sort Geist, Jon
collection PubMed
description The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface.
format Online
Article
Text
id pubmed-4930052
institution National Center for Biotechnology Information
language English
publishDate 1991
publisher [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology
record_format MEDLINE/PubMed
spelling pubmed-49300522017-02-09 Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs Geist, Jon Chandler-Horowitz, Deane Robinson, A. M. James, C. R. J Res Natl Inst Stand Technol Article The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface. [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1991 /pmc/articles/PMC4930052/ /pubmed/28184122 http://dx.doi.org/10.6028/jres.096.023 Text en https://creativecommons.org/publicdomain/zero/1.0/ The Journal of Research of the National Institute of Standards and Technology is a publication of the U.S. Government. The papers are in the public domain and are not subject to copyright in the United States. Articles from J Res may contain photographs or illustrations copyrighted by other commercial organizations or individuals that may not be used without obtaining prior approval from the holder of the copyright.
spellingShingle Article
Geist, Jon
Chandler-Horowitz, Deane
Robinson, A. M.
James, C. R.
Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs
title Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs
title_full Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs
title_fullStr Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs
title_full_unstemmed Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs
title_short Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs
title_sort numerical modeling of silicon photodiodes for high-accuracy applications part i. simulation programs
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4930052/
https://www.ncbi.nlm.nih.gov/pubmed/28184122
http://dx.doi.org/10.6028/jres.096.023
work_keys_str_mv AT geistjon numericalmodelingofsiliconphotodiodesforhighaccuracyapplicationspartisimulationprograms
AT chandlerhorowitzdeane numericalmodelingofsiliconphotodiodesforhighaccuracyapplicationspartisimulationprograms
AT robinsonam numericalmodelingofsiliconphotodiodesforhighaccuracyapplicationspartisimulationprograms
AT jamescr numericalmodelingofsiliconphotodiodesforhighaccuracyapplicationspartisimulationprograms

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