The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching

We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be...

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Detalles Bibliográficos
Autores principales: Zhong, Hao, Guo, Anran, Guo, Guohui, Li, Wei, Jiang, Yadong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4930436/
https://www.ncbi.nlm.nih.gov/pubmed/27368764
http://dx.doi.org/10.1186/s11671-016-1528-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4930436/
https://www.ncbi.nlm.nih.gov/pubmed/27368764
http://dx.doi.org/10.1186/s11671-016-1528-0

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