Cargando…
High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor
In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffe...
| Autores principales: | , , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2016
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4934265/ https://www.ncbi.nlm.nih.gov/pubmed/27338381 http://dx.doi.org/10.3390/s16060839 |