Fabrication of InGaN thin-film transistors using pulsed sputtering deposition

We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO(2), which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition...

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Autores principales: Itoh, Takeki, Kobayashi, Atsushi, Ueno, Kohei, Ohta, Jitsuo, Fujioka, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4935987/
https://www.ncbi.nlm.nih.gov/pubmed/27383148
http://dx.doi.org/10.1038/srep29500
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author Itoh, Takeki
Kobayashi, Atsushi
Ueno, Kohei
Ohta, Jitsuo
Fujioka, Hiroshi
author_facet Itoh, Takeki
Kobayashi, Atsushi
Ueno, Kohei
Ohta, Jitsuo
Fujioka, Hiroshi
author_sort Itoh, Takeki
collection PubMed
description We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO(2), which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(−1) s(−1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.
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spelling pubmed-49359872016-07-13 Fabrication of InGaN thin-film transistors using pulsed sputtering deposition Itoh, Takeki Kobayashi, Atsushi Ueno, Kohei Ohta, Jitsuo Fujioka, Hiroshi Sci Rep Article We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO(2), which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(−1) s(−1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors. Nature Publishing Group 2016-07-07 /pmc/articles/PMC4935987/ /pubmed/27383148 http://dx.doi.org/10.1038/srep29500 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Itoh, Takeki
Kobayashi, Atsushi
Ueno, Kohei
Ohta, Jitsuo
Fujioka, Hiroshi
Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
title Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
title_full Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
title_fullStr Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
title_full_unstemmed Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
title_short Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
title_sort fabrication of ingan thin-film transistors using pulsed sputtering deposition
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4935987/
https://www.ncbi.nlm.nih.gov/pubmed/27383148
http://dx.doi.org/10.1038/srep29500
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