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Fabrication of InGaN thin-film transistors using pulsed sputtering deposition

We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO(2), which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition...

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Detalles Bibliográficos
Autores principales:	Itoh, Takeki, Kobayashi, Atsushi, Ueno, Kohei, Ohta, Jitsuo, Fujioka, Hiroshi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4935987/ https://www.ncbi.nlm.nih.gov/pubmed/27383148 http://dx.doi.org/10.1038/srep29500

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