Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO(2)/Pt RRAM Device

The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). In this study, a statistical evaluation method is developed to...

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Detalles Bibliográficos
Autores principales: Zhang, Meiyun, Long, Shibing, Li, Yang, Liu, Qi, Lv, Hangbing, Miranda, Enrique, Suñé, Jordi, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4936978/
https://www.ncbi.nlm.nih.gov/pubmed/27389343
http://dx.doi.org/10.1186/s11671-016-1484-8

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