Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures

Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low tur...

Descripción completa

Detalles Bibliográficos
Autores principales: Sankaran, Kamatchi Jothiramalingam, Hoang, Duc Quang, Kunuku, Srinivasu, Korneychuk, Svetlana, Turner, Stuart, Pobedinskas, Paulius, Drijkoningen, Sien, Van Bael, Marlies K., D’ Haen, Jan, Verbeeck, Johan, Leou, Keh-Chyang, Lin, I-Nan, Haenen, Ken
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4941520/
https://www.ncbi.nlm.nih.gov/pubmed/27404130
http://dx.doi.org/10.1038/srep29444

Ejemplares similares

Ejemplares similares