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X-ray detection with zinc-blende (cubic) GaN Schottky diodes

The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons...

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Detalles Bibliográficos
Autores principales: Gohil, T., Whale, J., Lioliou, G., Novikov, S. V., Foxon, C. T., Kent, A. J., Barnett, A. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4941580/
https://www.ncbi.nlm.nih.gov/pubmed/27403806
http://dx.doi.org/10.1038/srep29535
Descripción
Sumario:The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35 keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At −5 V reverse bias, the capacitances of the diodes were measured to be (84.05 ± 0.01) pF and (121.67 ± 0.02) pF, respectively. At −5 V reverse bias, the dark current densities of the diodes were measured to be (347.2 ± 0.4) mA cm(−2) and (189.0 ± 0.2) mA cm(−2), respectively. The Schottky barrier heights of the devices (0.52 ± 0.07) eV and (0.63 ± 0.09) eV, respectively, were extracted from the forward dark current characteristics.