High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga(2)O(3) using a GaN buffer layer

We demonstrate the high structural and optical properties of In(x)Ga(1−x)N epilayers (0 ≤ x ≤ 23) grown on conductive and transparent ([Image: see text]01)-oriented β-Ga(2)O(3) substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability...

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Detalles Bibliográficos
Autores principales: Muhammed, M. M., Roldan, M. A., Yamashita, Y., Sahonta, S.-L., Ajia, I. A., Iizuka, K., Kuramata, A., Humphreys, C. J., Roqan, I. S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4944183/
https://www.ncbi.nlm.nih.gov/pubmed/27412372
http://dx.doi.org/10.1038/srep29747

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