A noise model for the evaluation of defect states in solar cells

A theoretical model, combining trapping/detrapping and recombination mechanisms, is formulated to explain the origin of random current fluctuations in silicon-based solar cells. In this framework, the comparison between dark and photo-induced noise allows the determination of important electronic pa...

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Autores principales: Landi, G., Barone, C., Mauro, C., Neitzert, H. C., Pagano, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4944190/
https://www.ncbi.nlm.nih.gov/pubmed/27412097
http://dx.doi.org/10.1038/srep29685
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author Landi, G.
Barone, C.
Mauro, C.
Neitzert, H. C.
Pagano, S.
author_facet Landi, G.
Barone, C.
Mauro, C.
Neitzert, H. C.
Pagano, S.
author_sort Landi, G.
collection PubMed
description A theoretical model, combining trapping/detrapping and recombination mechanisms, is formulated to explain the origin of random current fluctuations in silicon-based solar cells. In this framework, the comparison between dark and photo-induced noise allows the determination of important electronic parameters of the defect states. A detailed analysis of the electric noise, at different temperatures and for different illumination levels, is reported for crystalline silicon-based solar cells, in the pristine form and after artificial degradation with high energy protons. The evolution of the dominating defect properties is studied through noise spectroscopy.
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spelling pubmed-49441902016-07-26 A noise model for the evaluation of defect states in solar cells Landi, G. Barone, C. Mauro, C. Neitzert, H. C. Pagano, S. Sci Rep Article A theoretical model, combining trapping/detrapping and recombination mechanisms, is formulated to explain the origin of random current fluctuations in silicon-based solar cells. In this framework, the comparison between dark and photo-induced noise allows the determination of important electronic parameters of the defect states. A detailed analysis of the electric noise, at different temperatures and for different illumination levels, is reported for crystalline silicon-based solar cells, in the pristine form and after artificial degradation with high energy protons. The evolution of the dominating defect properties is studied through noise spectroscopy. Nature Publishing Group 2016-07-14 /pmc/articles/PMC4944190/ /pubmed/27412097 http://dx.doi.org/10.1038/srep29685 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Landi, G.
Barone, C.
Mauro, C.
Neitzert, H. C.
Pagano, S.
A noise model for the evaluation of defect states in solar cells
title A noise model for the evaluation of defect states in solar cells
title_full A noise model for the evaluation of defect states in solar cells
title_fullStr A noise model for the evaluation of defect states in solar cells
title_full_unstemmed A noise model for the evaluation of defect states in solar cells
title_short A noise model for the evaluation of defect states in solar cells
title_sort noise model for the evaluation of defect states in solar cells
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4944190/
https://www.ncbi.nlm.nih.gov/pubmed/27412097
http://dx.doi.org/10.1038/srep29685
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