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On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS
An on-chip low-loss and high conversion efficiency plasmonic waveguide converter is demonstrated at sub-THz in CMOS. By introducing a subwavelength periodic corrugated structure onto the transmission line (T-line) implemented by a top-layer metal, surface plasmon polaritons (SPP) are established to...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4956764/ https://www.ncbi.nlm.nih.gov/pubmed/27444782 http://dx.doi.org/10.1038/srep30063 |
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author | Liang, Yuan Yu, Hao Wen, Jincai Apriyana, Anak Agung Alit Li, Nan Luo, Yu Sun, Lingling |
author_facet | Liang, Yuan Yu, Hao Wen, Jincai Apriyana, Anak Agung Alit Li, Nan Luo, Yu Sun, Lingling |
author_sort | Liang, Yuan |
collection | PubMed |
description | An on-chip low-loss and high conversion efficiency plasmonic waveguide converter is demonstrated at sub-THz in CMOS. By introducing a subwavelength periodic corrugated structure onto the transmission line (T-line) implemented by a top-layer metal, surface plasmon polaritons (SPP) are established to propagate signals with strongly localized surface-wave. To match both impedance and momentum of other on-chip components with TEM-wave propagation, a mode converter structure featured by a smooth bridge between the Ground coplanar waveguide (GCPW) with 50 Ω impedance and SPP T-line is proposed. To further reduce area, the converter is ultimately simplified to a gradual increment of groove with smooth gradient. The proposed SPP T-lines with the converter is designed and fabricated in the standard 65 nm CMOS process. Both near-field simulation and measurement results show excellent conversion efficiency from quasi-TEM to SPP modes in a broadband frequency range. The converter achieves wideband impedance matching (<−9 dB) with excellent transmission efficiency (averagely −1.9 dB) from 110 GHz–325 GHz. The demonstrated compact and wideband SPP T-lines with mode converter have shown great potentials to replace existing waveguides as future on-chip THz interconnects. To the best of the author’s knowledge, this is the first time to demonstrate the (sub)-THz surface mode conversion on-chip in CMOS technology. |
format | Online Article Text |
id | pubmed-4956764 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-49567642016-07-26 On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS Liang, Yuan Yu, Hao Wen, Jincai Apriyana, Anak Agung Alit Li, Nan Luo, Yu Sun, Lingling Sci Rep Article An on-chip low-loss and high conversion efficiency plasmonic waveguide converter is demonstrated at sub-THz in CMOS. By introducing a subwavelength periodic corrugated structure onto the transmission line (T-line) implemented by a top-layer metal, surface plasmon polaritons (SPP) are established to propagate signals with strongly localized surface-wave. To match both impedance and momentum of other on-chip components with TEM-wave propagation, a mode converter structure featured by a smooth bridge between the Ground coplanar waveguide (GCPW) with 50 Ω impedance and SPP T-line is proposed. To further reduce area, the converter is ultimately simplified to a gradual increment of groove with smooth gradient. The proposed SPP T-lines with the converter is designed and fabricated in the standard 65 nm CMOS process. Both near-field simulation and measurement results show excellent conversion efficiency from quasi-TEM to SPP modes in a broadband frequency range. The converter achieves wideband impedance matching (<−9 dB) with excellent transmission efficiency (averagely −1.9 dB) from 110 GHz–325 GHz. The demonstrated compact and wideband SPP T-lines with mode converter have shown great potentials to replace existing waveguides as future on-chip THz interconnects. To the best of the author’s knowledge, this is the first time to demonstrate the (sub)-THz surface mode conversion on-chip in CMOS technology. Nature Publishing Group 2016-07-21 /pmc/articles/PMC4956764/ /pubmed/27444782 http://dx.doi.org/10.1038/srep30063 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Liang, Yuan Yu, Hao Wen, Jincai Apriyana, Anak Agung Alit Li, Nan Luo, Yu Sun, Lingling On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS |
title | On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS |
title_full | On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS |
title_fullStr | On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS |
title_full_unstemmed | On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS |
title_short | On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS |
title_sort | on-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in cmos |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4956764/ https://www.ncbi.nlm.nih.gov/pubmed/27444782 http://dx.doi.org/10.1038/srep30063 |
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