Effect of Oxygen-deficiencies on Resistance Switching in Amorphous YFe(0.5)Cr(0.5)O(3−d) films

Herein, we demonstrate the contribution of the oxygen-deficiencies on the bipolar resistance switching (RS) properties of amorphous-YFe(0.5)Cr(0.5)O(3−d) (a-YFCO) films. The a-YFCO films were prepared under various oxygen pressures to tune the concentration of oxygen-deficiencies in the films. The X...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Xianjie, Hu, Chang, Song, Yongli, Zhao, Xiaofeng, Zhang, Lingli, Lv, Zhe, Wang, Yang, Liu, Zhiguo, Wang, Yi, Zhang, Yu, Sui, Yu, Song, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4959013/
https://www.ncbi.nlm.nih.gov/pubmed/27452114
http://dx.doi.org/10.1038/srep30335
Descripción
Sumario:Herein, we demonstrate the contribution of the oxygen-deficiencies on the bipolar resistance switching (RS) properties of amorphous-YFe(0.5)Cr(0.5)O(3−d) (a-YFCO) films. The a-YFCO films were prepared under various oxygen pressures to tune the concentration of oxygen-deficiencies in the films. The XPS data verify that the oxygen-deficiencies increase with decreasing oxygen pressure. The RS property becomes more pronounced with more oxygen-deficiencies in a-YFCO films. Based on the Ohmic conduction measurements in the low resistance state, we confirm that the RS mechanism is related to the migration of oxygen-deficiencies. The enhanced RS and long retention in a-YFCO suggest a great potential for applications in nonvolatile memory devices.

Ejemplares similares