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Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process
The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor–liquid–solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal...
Autores principales: | Ishiyama, Takeshi, Nakagawa, Shuhei, Wakamatsu, Toshiki |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4964331/ https://www.ncbi.nlm.nih.gov/pubmed/27465800 http://dx.doi.org/10.1038/srep30608 |
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