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Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process

The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor–liquid–solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal...

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Detalles Bibliográficos
Autores principales: Ishiyama, Takeshi, Nakagawa, Shuhei, Wakamatsu, Toshiki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4964331/
https://www.ncbi.nlm.nih.gov/pubmed/27465800
http://dx.doi.org/10.1038/srep30608

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