Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes

One of the interesing tunneling phenomena is negative differential resistance (NDR), the basic principle of resonant-tunneling diodes. NDR has been utilized in various semiconductor devices such as frequency multipliers, oscillators, relfection amplifiers, logic switches, and memories. The NDR in gr...

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Detalles Bibliográficos
Autores principales: Lee, Kyeong Won, Jang, Chan Wook, Shin, Dong Hee, Kim, Jong Min, Kang, Soo Seok, Lee, Dae Hun, Kim, Sung, Choi, Suk-Ho, Hwang, Euyheon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4964343/
https://www.ncbi.nlm.nih.gov/pubmed/27465107
http://dx.doi.org/10.1038/srep30669

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4964343/
https://www.ncbi.nlm.nih.gov/pubmed/27465107
http://dx.doi.org/10.1038/srep30669

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