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Quantum electromechanics on silicon nitride nanomembranes
Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom—mechanical, optical and microwave—would enable a quantum interconnect between microwave and optical quant...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4976205/ https://www.ncbi.nlm.nih.gov/pubmed/27484751 http://dx.doi.org/10.1038/ncomms12396 |
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author | Fink, J. M. Kalaee, M. Pitanti, A. Norte, R. Heinzle, L. Davanço, M. Srinivasan, K. Painter, O. |
author_facet | Fink, J. M. Kalaee, M. Pitanti, A. Norte, R. Heinzle, L. Davanço, M. Srinivasan, K. Painter, O. |
author_sort | Fink, J. M. |
collection | PubMed |
description | Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom—mechanical, optical and microwave—would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments. |
format | Online Article Text |
id | pubmed-4976205 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-49762052016-08-19 Quantum electromechanics on silicon nitride nanomembranes Fink, J. M. Kalaee, M. Pitanti, A. Norte, R. Heinzle, L. Davanço, M. Srinivasan, K. Painter, O. Nat Commun Article Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom—mechanical, optical and microwave—would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments. Nature Publishing Group 2016-08-03 /pmc/articles/PMC4976205/ /pubmed/27484751 http://dx.doi.org/10.1038/ncomms12396 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Fink, J. M. Kalaee, M. Pitanti, A. Norte, R. Heinzle, L. Davanço, M. Srinivasan, K. Painter, O. Quantum electromechanics on silicon nitride nanomembranes |
title | Quantum electromechanics on silicon nitride nanomembranes |
title_full | Quantum electromechanics on silicon nitride nanomembranes |
title_fullStr | Quantum electromechanics on silicon nitride nanomembranes |
title_full_unstemmed | Quantum electromechanics on silicon nitride nanomembranes |
title_short | Quantum electromechanics on silicon nitride nanomembranes |
title_sort | quantum electromechanics on silicon nitride nanomembranes |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4976205/ https://www.ncbi.nlm.nih.gov/pubmed/27484751 http://dx.doi.org/10.1038/ncomms12396 |
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