Controlled creation and displacement of charged domain walls in ferroelectric thin films

Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged domain walls in ferroelectric thin films dur...

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Detalles Bibliográficos
Autores principales: Feigl, L., Sluka, T., McGilly, L. J., Crassous, A., Sandu, C. S., Setter, N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4979207/
https://www.ncbi.nlm.nih.gov/pubmed/27507433
http://dx.doi.org/10.1038/srep31323

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4979207/
https://www.ncbi.nlm.nih.gov/pubmed/27507433
http://dx.doi.org/10.1038/srep31323

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