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Dislocation network with pair-coupling structure in {111} γ/γ′ interface of Ni-based single crystal superalloy
The γ/γ′ interface dislocation network is reported to improve the high temperature creep resistance of single crystal superalloys and is usually found to deposit in {001} interface. In this work, a new type of dislocation network was found in {111} γ/γ′ interface at a single crystal model superalloy...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4980694/ https://www.ncbi.nlm.nih.gov/pubmed/27511822 http://dx.doi.org/10.1038/srep29941 |