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Quasi-freestanding epitaxial silicene on Ag(111) by oxygen intercalation
Silicene is a monolayer allotrope of silicon atoms arranged in a honeycomb structure with massless Dirac fermion characteristics similar to graphene. It merits development of silicon-based multifunctional nanoelectronic and spintronic devices operated at room temperature because of strong spin-orbit...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4985226/ https://www.ncbi.nlm.nih.gov/pubmed/27532041 http://dx.doi.org/10.1126/sciadv.1600067 |
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author | Du, Yi Zhuang, Jincheng Wang, Jiaou Li, Zhi Liu, Hongsheng Zhao, Jijun Xu, Xun Feng, Haifeng Chen, Lan Wu, Kehui Wang, Xiaolin Dou, Shi Xue |
author_facet | Du, Yi Zhuang, Jincheng Wang, Jiaou Li, Zhi Liu, Hongsheng Zhao, Jijun Xu, Xun Feng, Haifeng Chen, Lan Wu, Kehui Wang, Xiaolin Dou, Shi Xue |
author_sort | Du, Yi |
collection | PubMed |
description | Silicene is a monolayer allotrope of silicon atoms arranged in a honeycomb structure with massless Dirac fermion characteristics similar to graphene. It merits development of silicon-based multifunctional nanoelectronic and spintronic devices operated at room temperature because of strong spin-orbit coupling. Nevertheless, until now, silicene could only be epitaxially grown on conductive substrates. The strong silicene-substrate interaction may depress its superior electronic properties. We report a quasi-freestanding silicene layer that has been successfully obtained through oxidization of bilayer silicene on the Ag(111) surface. The oxygen atoms intercalate into the underlayer of silicene, resulting in isolation of the top layer of silicene from the substrate. In consequence, the top layer of silicene exhibits the signature of a 1 × 1 honeycomb lattice and hosts massless Dirac fermions because of much less interaction with the substrate. Furthermore, the oxidized silicon buffer layer is expected to serve as an ideal dielectric layer for electric gating in electronic devices. These findings are relevant for the future design and application of silicene-based nanoelectronic and spintronic devices. |
format | Online Article Text |
id | pubmed-4985226 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-49852262016-08-16 Quasi-freestanding epitaxial silicene on Ag(111) by oxygen intercalation Du, Yi Zhuang, Jincheng Wang, Jiaou Li, Zhi Liu, Hongsheng Zhao, Jijun Xu, Xun Feng, Haifeng Chen, Lan Wu, Kehui Wang, Xiaolin Dou, Shi Xue Sci Adv Research Articles Silicene is a monolayer allotrope of silicon atoms arranged in a honeycomb structure with massless Dirac fermion characteristics similar to graphene. It merits development of silicon-based multifunctional nanoelectronic and spintronic devices operated at room temperature because of strong spin-orbit coupling. Nevertheless, until now, silicene could only be epitaxially grown on conductive substrates. The strong silicene-substrate interaction may depress its superior electronic properties. We report a quasi-freestanding silicene layer that has been successfully obtained through oxidization of bilayer silicene on the Ag(111) surface. The oxygen atoms intercalate into the underlayer of silicene, resulting in isolation of the top layer of silicene from the substrate. In consequence, the top layer of silicene exhibits the signature of a 1 × 1 honeycomb lattice and hosts massless Dirac fermions because of much less interaction with the substrate. Furthermore, the oxidized silicon buffer layer is expected to serve as an ideal dielectric layer for electric gating in electronic devices. These findings are relevant for the future design and application of silicene-based nanoelectronic and spintronic devices. American Association for the Advancement of Science 2016-07-22 /pmc/articles/PMC4985226/ /pubmed/27532041 http://dx.doi.org/10.1126/sciadv.1600067 Text en Copyright © 2016, The Authors http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. |
spellingShingle | Research Articles Du, Yi Zhuang, Jincheng Wang, Jiaou Li, Zhi Liu, Hongsheng Zhao, Jijun Xu, Xun Feng, Haifeng Chen, Lan Wu, Kehui Wang, Xiaolin Dou, Shi Xue Quasi-freestanding epitaxial silicene on Ag(111) by oxygen intercalation |
title | Quasi-freestanding epitaxial silicene on Ag(111) by oxygen intercalation |
title_full | Quasi-freestanding epitaxial silicene on Ag(111) by oxygen intercalation |
title_fullStr | Quasi-freestanding epitaxial silicene on Ag(111) by oxygen intercalation |
title_full_unstemmed | Quasi-freestanding epitaxial silicene on Ag(111) by oxygen intercalation |
title_short | Quasi-freestanding epitaxial silicene on Ag(111) by oxygen intercalation |
title_sort | quasi-freestanding epitaxial silicene on ag(111) by oxygen intercalation |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4985226/ https://www.ncbi.nlm.nih.gov/pubmed/27532041 http://dx.doi.org/10.1126/sciadv.1600067 |
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