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Understanding the growth mechanism of graphene on Ge/Si(001) surfaces
The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graph...
Autores principales: | , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4987685/ https://www.ncbi.nlm.nih.gov/pubmed/27531322 http://dx.doi.org/10.1038/srep31639 |
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author | Dabrowski, J. Lippert, G. Avila, J. Baringhaus, J. Colambo, I. Dedkov, Yu S. Herziger, F. Lupina, G. Maultzsch, J. Schaffus, T. Schroeder, T. Kot, M. Tegenkamp, C. Vignaud, D. Asensio, M.-C. |
author_facet | Dabrowski, J. Lippert, G. Avila, J. Baringhaus, J. Colambo, I. Dedkov, Yu S. Herziger, F. Lupina, G. Maultzsch, J. Schaffus, T. Schroeder, T. Kot, M. Tegenkamp, C. Vignaud, D. Asensio, M.-C. |
author_sort | Dabrowski, J. |
collection | PubMed |
description | The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C(2)H(4)) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy as well as density functional theory (DFT) calculations, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive mapping of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by 30° with respect to each other. The growth mode is attributed to the mechanism when small graphene “molecules” nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process. |
format | Online Article Text |
id | pubmed-4987685 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-49876852016-08-30 Understanding the growth mechanism of graphene on Ge/Si(001) surfaces Dabrowski, J. Lippert, G. Avila, J. Baringhaus, J. Colambo, I. Dedkov, Yu S. Herziger, F. Lupina, G. Maultzsch, J. Schaffus, T. Schroeder, T. Kot, M. Tegenkamp, C. Vignaud, D. Asensio, M.-C. Sci Rep Article The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C(2)H(4)) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy as well as density functional theory (DFT) calculations, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive mapping of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by 30° with respect to each other. The growth mode is attributed to the mechanism when small graphene “molecules” nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process. Nature Publishing Group 2016-08-17 /pmc/articles/PMC4987685/ /pubmed/27531322 http://dx.doi.org/10.1038/srep31639 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Dabrowski, J. Lippert, G. Avila, J. Baringhaus, J. Colambo, I. Dedkov, Yu S. Herziger, F. Lupina, G. Maultzsch, J. Schaffus, T. Schroeder, T. Kot, M. Tegenkamp, C. Vignaud, D. Asensio, M.-C. Understanding the growth mechanism of graphene on Ge/Si(001) surfaces |
title | Understanding the growth mechanism of graphene on Ge/Si(001) surfaces |
title_full | Understanding the growth mechanism of graphene on Ge/Si(001) surfaces |
title_fullStr | Understanding the growth mechanism of graphene on Ge/Si(001) surfaces |
title_full_unstemmed | Understanding the growth mechanism of graphene on Ge/Si(001) surfaces |
title_short | Understanding the growth mechanism of graphene on Ge/Si(001) surfaces |
title_sort | understanding the growth mechanism of graphene on ge/si(001) surfaces |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4987685/ https://www.ncbi.nlm.nih.gov/pubmed/27531322 http://dx.doi.org/10.1038/srep31639 |
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