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Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping
The interactions between thermal phonons and defects are conventionally described as scattering processes, an idea proposed almost a century ago. In this contribution, ab-initio molecular-dynamics simulations provide atomic-level insight into the nature of these interactions. The defect is the Si|X...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4989232/ https://www.ncbi.nlm.nih.gov/pubmed/27535463 http://dx.doi.org/10.1038/srep32150 |
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author | Bebek, M. B. Stanley, C. M. Gibbons, T. M. Estreicher, S. K. |
author_facet | Bebek, M. B. Stanley, C. M. Gibbons, T. M. Estreicher, S. K. |
author_sort | Bebek, M. B. |
collection | PubMed |
description | The interactions between thermal phonons and defects are conventionally described as scattering processes, an idea proposed almost a century ago. In this contribution, ab-initio molecular-dynamics simulations provide atomic-level insight into the nature of these interactions. The defect is the Si|X interface in a nanowire containing a δ-layer (X is C or Ge). The phonon-defect interactions are temperature dependent and involve the trapping of phonons for meaningful lengths of time in defect-related, localized, vibrational modes. No phonon scattering occurs and the momentum of the phonons released by the defect is unrelated to the momentum of the phonons that generated the excitation. The results are extended to the interactions involving only bulk phonons and to phonon-defect interactions at high temperatures. These do resemble scattering since phonon trapping occurs for a length of time short enough for the momentum of the incoming phonon to be conserved. |
format | Online Article Text |
id | pubmed-4989232 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-49892322016-08-30 Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping Bebek, M. B. Stanley, C. M. Gibbons, T. M. Estreicher, S. K. Sci Rep Article The interactions between thermal phonons and defects are conventionally described as scattering processes, an idea proposed almost a century ago. In this contribution, ab-initio molecular-dynamics simulations provide atomic-level insight into the nature of these interactions. The defect is the Si|X interface in a nanowire containing a δ-layer (X is C or Ge). The phonon-defect interactions are temperature dependent and involve the trapping of phonons for meaningful lengths of time in defect-related, localized, vibrational modes. No phonon scattering occurs and the momentum of the phonons released by the defect is unrelated to the momentum of the phonons that generated the excitation. The results are extended to the interactions involving only bulk phonons and to phonon-defect interactions at high temperatures. These do resemble scattering since phonon trapping occurs for a length of time short enough for the momentum of the incoming phonon to be conserved. Nature Publishing Group 2016-08-18 /pmc/articles/PMC4989232/ /pubmed/27535463 http://dx.doi.org/10.1038/srep32150 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Bebek, M. B. Stanley, C. M. Gibbons, T. M. Estreicher, S. K. Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping |
title | Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping |
title_full | Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping |
title_fullStr | Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping |
title_full_unstemmed | Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping |
title_short | Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping |
title_sort | temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4989232/ https://www.ncbi.nlm.nih.gov/pubmed/27535463 http://dx.doi.org/10.1038/srep32150 |
work_keys_str_mv | AT bebekmb temperaturedependenceofphonondefectinteractionsphononscatteringvsphonontrapping AT stanleycm temperaturedependenceofphonondefectinteractionsphononscatteringvsphonontrapping AT gibbonstm temperaturedependenceofphonondefectinteractionsphononscatteringvsphonontrapping AT estreichersk temperaturedependenceofphonondefectinteractionsphononscatteringvsphonontrapping |