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Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy
3D InGaN/GaN microstructures grown by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have been extensively studied using a range of electron microscopy techniques. The growth of material by MBE has led to the growth of cubic GaN material. The changes in these crystal phas...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4989450/ https://www.ncbi.nlm.nih.gov/pubmed/26366483 http://dx.doi.org/10.1111/jmi.12285 |
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author | GRIFFITHS, IJ CHERNS, D ALBERT, S. BENGOECHEA‐ENCABO, A. ANGEL SANCHEZ, M. CALLEJA, E. SCHIMPKE, T. STRASSBURG, M. |
author_facet | GRIFFITHS, IJ CHERNS, D ALBERT, S. BENGOECHEA‐ENCABO, A. ANGEL SANCHEZ, M. CALLEJA, E. SCHIMPKE, T. STRASSBURG, M. |
author_sort | GRIFFITHS, IJ |
collection | PubMed |
description | 3D InGaN/GaN microstructures grown by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have been extensively studied using a range of electron microscopy techniques. The growth of material by MBE has led to the growth of cubic GaN material. The changes in these crystal phases has been investigated by Electron Energy Loss Spectroscopy, where the variations in the fine structure of the N K‐edge shows a clear difference allowing the mapping of the phases to take place. GaN layers grown for light emitting devices sometimes have cubic inclusions in the normally hexagonal wurtzite structures, which can influence the device electronic properties. Differences in the fine structure of the N K‐edge between cubic and hexagonal material in electron energy loss spectra are used to map cubic and hexagonal regions in a GaN/InGaN microcolumnar device. The method of mapping is explained, and the factors limiting spatial resolution are discussed. |
format | Online Article Text |
id | pubmed-4989450 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-49894502016-09-01 Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy GRIFFITHS, IJ CHERNS, D ALBERT, S. BENGOECHEA‐ENCABO, A. ANGEL SANCHEZ, M. CALLEJA, E. SCHIMPKE, T. STRASSBURG, M. J Microsc Themed Issue Papers 3D InGaN/GaN microstructures grown by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have been extensively studied using a range of electron microscopy techniques. The growth of material by MBE has led to the growth of cubic GaN material. The changes in these crystal phases has been investigated by Electron Energy Loss Spectroscopy, where the variations in the fine structure of the N K‐edge shows a clear difference allowing the mapping of the phases to take place. GaN layers grown for light emitting devices sometimes have cubic inclusions in the normally hexagonal wurtzite structures, which can influence the device electronic properties. Differences in the fine structure of the N K‐edge between cubic and hexagonal material in electron energy loss spectra are used to map cubic and hexagonal regions in a GaN/InGaN microcolumnar device. The method of mapping is explained, and the factors limiting spatial resolution are discussed. John Wiley and Sons Inc. 2015-09-14 2016-05 /pmc/articles/PMC4989450/ /pubmed/26366483 http://dx.doi.org/10.1111/jmi.12285 Text en © 2015 The Authors. Journal of Microscopy published by John Wiley & Sons. Ltd on behalf of Royal Microscopical Society. This is an open access article under the terms of the Creative Commons Attribution (http://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Themed Issue Papers GRIFFITHS, IJ CHERNS, D ALBERT, S. BENGOECHEA‐ENCABO, A. ANGEL SANCHEZ, M. CALLEJA, E. SCHIMPKE, T. STRASSBURG, M. Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy |
title | Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy |
title_full | Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy |
title_fullStr | Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy |
title_full_unstemmed | Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy |
title_short | Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy |
title_sort | distinguishing cubic and hexagonal phases within ingan/gan microstructures using electron energy loss spectroscopy |
topic | Themed Issue Papers |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4989450/ https://www.ncbi.nlm.nih.gov/pubmed/26366483 http://dx.doi.org/10.1111/jmi.12285 |
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