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Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy

3D InGaN/GaN microstructures grown by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have been extensively studied using a range of electron microscopy techniques. The growth of material by MBE has led to the growth of cubic GaN material. The changes in these crystal phas...

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Detalles Bibliográficos
Autores principales:	GRIFFITHS, IJ, CHERNS, D, ALBERT, S., BENGOECHEA‐ENCABO, A., ANGEL SANCHEZ, M., CALLEJA, E., SCHIMPKE, T., STRASSBURG, M.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	John Wiley and Sons Inc. 2015
Materias:	Themed Issue Papers
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4989450/ https://www.ncbi.nlm.nih.gov/pubmed/26366483 http://dx.doi.org/10.1111/jmi.12285

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