Cargando…
Saving Moore’s Law Down To 1 nm Channels With Anisotropic Effective Mass
Scaling transistors’ dimensions has been the thrust for the semiconductor industry in the last four decades. However, scaling channel lengths beyond 10 nm has become exceptionally challenging due to the direct tunneling between source and drain which degrades gate control, switching functionality, a...
Autores principales: | Ilatikhameneh, Hesameddin, Ameen, Tarek, Novakovic, Bozidar, Tan, Yaohua, Klimeck, Gerhard, Rahman, Rajib |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4990915/ https://www.ncbi.nlm.nih.gov/pubmed/27538849 http://dx.doi.org/10.1038/srep31501 |
Ejemplares similares
-
Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
por: Ameen, Tarek A., et al.
Publicado: (2016) -
Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot
por: Ameen, Tarek A, et al.
Publicado: (2018) -
Understanding contact gating in Schottky barrier transistors from 2D channels
por: Prakash, Abhijith, et al.
Publicado: (2017) -
Moore’s Law revisited through Intel chip density
por: Burg, David, et al.
Publicado: (2021) -
A ‘Moore's law’ for fibers enables intelligent fabrics
por: Qian, Shengtai, et al.
Publicado: (2022)