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Switching of both local ferroelectric and magnetic domains in multiferroic Bi(0.9)La(0.1)FeO(3) thin film by mechanical force

Cross-coupling of ordering parameters in multiferroic materials by multiple external stimuli other than electric field and magnetic field is highly desirable from both practical application and fundamental study points of view. Recently, mechanical force has attracted great attention in switching of...

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Detalles Bibliográficos
Autores principales: Jia, Tingting, Kimura, Hideo, Cheng, Zhenxiang, Zhao, Hongyang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4992825/
https://www.ncbi.nlm.nih.gov/pubmed/27546488
http://dx.doi.org/10.1038/srep31867
Descripción
Sumario:Cross-coupling of ordering parameters in multiferroic materials by multiple external stimuli other than electric field and magnetic field is highly desirable from both practical application and fundamental study points of view. Recently, mechanical force has attracted great attention in switching of ferroic ordering parameters via electro-elastic coupling in ferroelectric materials. In this work, mechanical force induced both polarization and magnetization switching were visualized in a polycrystalline multiferroic Bi(0.9)La(0.1)FeO(3) thin film using a scanning probe microscopy system. The piezoresponse force microscopy and magnetic force microscopy responses suggest that both the ferroelectric domains and the magnetic domains in Bi(0.9)La(0.1)FeO(3) film could be switched by mechanical force as well as by electric field. High tip stress applied on our thin film is demonstrated as able to induce ferroelastic switching and thus induce both ferroelectric dipole and magnetic spin flipping, as a consequence of electro-elastic coupling and magneto-electric coupling. The demonstration of mechanical force control of both the ferroelectric and the magnetic domains at room temperature provides a new freedom for manipulation of multiferroics and could result in devices with novel functionalities.