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Spin-Hall-Effect-Assisted Electroresistance in Antiferromagnets via 10(5) A/cm(2) dc Current
Antiferromagnet (AFM) spintronics with reduced electrical current is greatly expected to process information with high integration and low power consumption. In Pt/FeMn and Ta/FeMn hybrids, we observe significant resistance variation (up to 7% of the total resistance) manipulated by 10(5) A/cm(2) dc...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4992953/ https://www.ncbi.nlm.nih.gov/pubmed/27546199 http://dx.doi.org/10.1038/srep31966 |