Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors

Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of...

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Detalles Bibliográficos
Autores principales: Lv, Y. J., Song, X. B., Wang, Y. G., Fang, Y. L., Feng, Z. H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4994815/
https://www.ncbi.nlm.nih.gov/pubmed/27553382
http://dx.doi.org/10.1186/s11671-016-1591-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4994815/
https://www.ncbi.nlm.nih.gov/pubmed/27553382
http://dx.doi.org/10.1186/s11671-016-1591-6

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