Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process

We have demonstrated that photo-thin film transistors (photo-TFTs) fabricated via a simple defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and high sensitivity. The photo-TFTs are inverted-staggered bottom-gate type indium-gallium-zinc-oxide (IGZO) TFTs fab...

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Detalles Bibliográficos
Autores principales: Yun, Myeong Gu, Kim, Ye Kyun, Ahn, Cheol Hyoun, Cho, Sung Woon, Kang, Won Jun, Cho, Hyung Koun, Kim, Yong-Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4995484/
https://www.ncbi.nlm.nih.gov/pubmed/27553518
http://dx.doi.org/10.1038/srep31991

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4995484/
https://www.ncbi.nlm.nih.gov/pubmed/27553518
http://dx.doi.org/10.1038/srep31991

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